document number: 94514 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 25-apr-08 1 thyristor/thyristor, 150 a (new int-a-pak power module) vskt152/04pbf vishay high power products features ? electrically isolated by dbc ceramic (ai 2 o 3 ) ? 3500 v rms isolating voltage ? industrial standard package ? high surge capability ? glass passivated chips ? simple mounting ? ul e78996 approved ? totally lead (pb)-free ? designed and qualified for multiple level applications ? battery charges ?welders ? power converters electrical specifications product summary i t(av) 150 a new int-a-pak rohs compliant major ratings and characteristics symbol characteristics values units i t(av) 150 a t c 85 c i t(rms) 330 a i tsm 50 hz 4000 60 hz 4200 i 2 t 50 hz 80 ka 2 s 60 hz 73 i 2 t 800 ka 2 s v rrm 400 v t stg range - 40 to 150 c t j - 40 to 125 voltage ratings type number v rrm /v drm , maximum repetitive peak reverse voltage v v rsm /v dsm , maximum non-repetitive peak reverse voltage v i rrm /i drm at 125 c ma vskt152/04pbf 400 500 50
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94514 2 revision: 25-apr-08 vskt152/04pbf vishay high power products thyristor/thyristor, 150 a (new int-a-pak power module) on-state conduction parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction half sine wave 150 a 85 c maximum rms on-state current i t(rms) as ac switch 330 a maximum peak, one-cycle on-state, non-repetitive surge current i tsm t = 10 ms no voltage reapplied sine half wave, initial t j = t j maximum 4000 t = 8.3 ms 4200 t = 10 ms 100 % v rrm reapplied 3350 t = 8.3 ms 3500 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 80 ka 2 s t = 8.3 ms 73 t = 10 ms 100 % v rrm reapplied 56 t = 8.3 ms 51 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 800 ka 2 s value of threshold voltage v t(to) t j maximum 0.82 v on-state slope resistance r t 1.44 m maximum on-state voltage drop v tm i pk = x i t(av) , t j = 25 c 1.48 v maximum holding current i h t j = 25 c, anode supply = 6 v, resistive load, gate open circuit 200 ma maximum latching current i l t j = 25 c, anode supply = 6 v, resistive load 400 switching parameter symbol test conditions values units typical delay time t gd t j = 25 c gate current = 1 a, dl g /dt = 1 a/s v d = 0.67 % v drm 1 s typical rise time t gr 2 typical turn-off time t q i tm = 300 a, - dl/dt = 15 a/s; t j = t j maximum v r = 50 v; dv/dt = 20 v/s; gate 0 v, 100 50 to 200 blocking parameter symbol test conditions values units maximum peak reverse and off-state leakage current i rrm, i drm t j = 125 c 50 ma rms insulation voltage v ins 50 hz, circuit to base, all terminals shorted, t = 1 s 3500 v critical rate of rise of off-state voltage dv/dt t j = t j maximum, exponential to 67 % rated v drm 1000 v/s
document number: 94514 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 25-apr-08 3 vskt152/04pbf thyristor/thyristor, 150 a (new int-a-pak power module) vishay high power products note ? table shows the increment of thermal resistance r thjc when devices operate at diffe rent conduction angles than dc triggering parameter symbol test conditions values units maximum peak gate power p gm t p 5 ms, t j = t j maximum 12 w maximum average gate power p g(av) f = 50 hz, t j = t j maximum 3 maximum peak gate current i gm t p 5 ms, t j = t j maximum 3a maximum peak negative gate voltage - v gt 10 v maximum required dc gate voltage to trigger v gt t j = - 40 c anode supply = 6 v, resistive load; r a = 1 4 t j = 25 c 2.5 t j = t j maximum 1.7 maximum required dc gate current to trigger i gt t j = - 40 c 270 ma t j = 25 c 150 t j = t j maximum 80 maximum gate voltage that will not trigger v gd t j = t j maximum, rated v drm applied 0.3 v maximum gate current that will not trigger i gd 10 ma maximum rate of rise of turned-on current di/dt t j = t j maximum, i tm = 400 a rated v drm applied 300 a/s thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to case per junction r thjc dc operation 0.18 k/w maximum thermal resistance, case to heatsink per module r thcs mounting surface smooth, flat and greased 0.05 mounting torque 10 % iap to heatsink a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. lubricated threads. 4 to 6 nm busbar to iap approximate weight 200 g 7.1 oz. case style new int-a-pak r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 vskt152/04pbf 0.007 0.010 0.013 0.016 0.017 0.009 0.012 0.014 0.016 0.017 k/w
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94514 4 revision: 25-apr-08 vskt152/04pbf vishay high power products thyristor/thyristor, 150 a (new int-a-pak power module) fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - forward powe r loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current ) c ( e r u t a r e p m e t e s a c e l b a w o l l a m u m i x a m average on-state current (a) 80 90 100 110 120 130 0 20406080100120140160 30? 60? 90? 120? 180? conduction angle vskt152 rthjc (dc) = 0.182 k/w average on-state current (a) ) c ( e r u t a r e p m e t e s a c e l b a w o l l a m u m i x a m 60 70 80 90 100 110 120 130 0 50 100 150 200 25 0 30? 60? 90? 180? dc 120? vskt152 rthjc (dc) = 0.182 k/w conduction period ) w ( s s o l r e w o p e t a t s - n o e g a r e v a m u m i x a m average on-state current (a) 0 20 40 60 80 100 120 140 160 180 200 220 0 20 40 60 80 100 120 140 16 0 rms limit conduction angle 180? 120? 90? 60? 30? vskt152 tj = 125?c ) w ( s s o l r e w o p e t a t s - n o e g a r e v a m u m i x a m average on-state current (a) 0 50 100 150 200 250 300 0 50 100 150 200 25 0 dc 180? 120? 90? 60? 30? rms limit conduction period vskt152 tj = 125?c number of equal amplitude half cycle current pulses (n) ) a ( t n e r r u c e t a t s - n o e v a w e n i s f l a h k a e p 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 11010 0 at any rated load condition and with rated vrrm applied following surge. initial tj = 125?c @ 60 hz 0.0083 s @ 50 hz 0.0100 s vskt152 per junction pulse train duration (s) ) a ( t n e r r u c e t a t s - n o e v a w e n i s f l a h k a e p 1500 2000 2500 3000 3500 4000 4500 0.01 0.1 1 maximum non repetitive surge current of conduction may not be maintained. vskt152 per junction versus pulse train duration. control initial tj = 125?c no voltage reapplied rated vrrm reapplied
document number: 94514 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 25-apr-08 5 vskt152/04pbf thyristor/thyristor, 150 a (new int-a-pak power module) vishay high power products fig. 7 - on-state power loss characteristics fig. 8 - on-state power loss characteristics fig. 9 - on-state power loss characteristics maximum allowable ambient temperature (c) ) w ( s s o l r e w o p e t a t s - n o l a t o t m u m i x a m total rms output current (a) 025507510012 5 0.04 k/w 0.08 k/w 0.12 k/w 0.16 k/w 0.4 k/w 0.25 k/ w 0.6 k/w 1 k/w rthsa = 0.01 k/w - del ta r 0 100 200 300 400 500 0 50 100 150 200 250 300 350 180? 120? 90? 60? 30? conduction angle vskt152 per module tj = 125?c ) w ( s s o l r e w o p l a t o t m u m i x a m total output current (a) maximum allowable ambient temperature (c) 0255075100125 0.04 k/w 0.12 k/w 0.2 k/w 0.35 k/ w 0.6 k/w rthsa = 0. 01 k/w - delta r 0.08 k/w 0 100 200 300 400 500 600 700 800 900 0 50 100 150 200 250 300 2 x vskt152 single phase bridge connected tj = 125?c 180? (sine) 180? (rect) ) w ( s s o l r e w o p l a t o t m u m i x a m total output current (a) maximum allowable ambient temperature (c) 0255075100125 0.08 k/w 0.1 k/w 0.16 k/w 0.25 k /w 0.4 k/w 1 k/w rthsa = 0.04 k/w - delta r 0 200 400 600 800 1000 1200 1400 0 100 200 300 400 50 0 120? (rect)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94514 6 revision: 25-apr-08 vskt152/04pbf vishay high power products thyristor/thyristor, 150 a (new int-a-pak power module) fig. 10 - on-state voltage drop charac teristics fig. 11 - thermal impedance z thjc characteristics fig. 12 - gate characteristics instantaneous on-state voltage (v) instantaneous on-state current (a) 1 10 100 1000 0.5 1 1.5 2 2.5 vskt152 per junction tj = 25?c tj = 125?c square wave pulse duration (s) transient thermal impedance z thjc (k/w) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 steady state value rthjc = 0.182 k/w (dc operation) vskt152 instantaneous gate current (a) instantaneous gate voltage (v) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) rectangular gate pulse (4) (3) (2) (1) tj = -40 ? c tj = 25 ?c tj = 125 ?c a)recommended load line for b)recommended load line for vgd igd (1) pgm = 200 w, tp = 300 s (2) pgm = 60 w, tp = 1 ms (3) pgm = 30 w, tp = 2 ms (4) pgm = 12 w, tp = 5 ms <= 30% rated di/dt: 15 v, 40 ohms tr = 1 s, tp >= 6 s rated di/dt: 20 v, 20 ohms tr = 0.5 s, tp >= 6 s frequency limited by pg(av) vskt152
document number: 94514 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 25-apr-08 7 vskt152/04pbf thyristor/thyristor, 150 a (new int-a-pak power module) vishay high power products ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 circuit configuration 1 - module type 2 - circuit configuration: t = two scr doubler configuration 3 - current rating 4 - voltage rating (04 = 400 v) 5 - pbf = lead (pb)-free device code 5 13 24 vsk t 152 / 04 pbf 5 4 3 6 7 1 2 12 5 4 7 6 3 - + ~ links to related documents dimensions http://www.vishay.com/doc?95067
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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